Nd:YVO4 crystal is one of the most efficient laser host crystal currently existing for diode laser pumped solid state lasers. Its large stimulated emission cross-section at lasing wavelengtheffective diode pumped solid-state lasers.
Nd:YVO4 crystal is one of the most efficient laser host crystal currently existing for diode laser pumped solid state lasers. Its large stimulated emission cross-section at lasing wavelength, high abs
Nd:YVO4 crystal is one of the most efficient laser host crystal currently existing for diode laser pumped solid state lasers. Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, high laser induced damage threshold as well as good physical, optical and mechanical properties make Nd:YVO4 an excellent crystal for high power, stable and cost effective diode pumped solid-state lasers.
Main Features
Typical Applications
Specifications
Nd Dopant Level | 0.1 – 5.0 atm% |
Standard Dimensions | 3x3x3 mm3, 3x3x1 mm3, 3x3x0.5 mm3 |
Wavefront Distortion | λ/8@ 633nm |
Scattering | Invisible, probed with a He-Ne laser |
Orientation Tolerance | ±0.5deg |
Dimensional Tolerance | ±0.1mm |
End-faces Configuration | Plano/Plano |
Surface Flatness | λ/10 at 633 nm |
Surface Quality | 10/5 Scratch and Dig |
Parallelism | < 10 arc seconds |
Clear Aperture | > Central 90% |
Intrinsic Loss | < 0.1%cm-1 |
Physical Properties
Atomic Density | ~1.37×1020 atoms/cm3 |
Crystal Structure | Zircon Tetragonal, space group D4h |
a=b=7.12, c=6.29 | |
Density | 4.22 g/cm3 |
Mohs Hardness | Glass-like, ~5 |
Thermal Expansion Coefficient | a=4.43×10-6/K, c=11.37×10-6/K |
Optical Properties(typically for 1.1 atm% Nd:YVO4, a-cut crystals)
Lasing Wavelengths | 914nm, 1064 nm, 1342 nm |
Thermal Optical Coefficient | dna/dT=8.5×10-6/K, dnc/dT=3.0×10-6/K |
Stimulated Emission Cross-Section | 25.0×10-19cm2 @1064 nm |
Fluorescent Lifetime | 90us @808 nm, (50us @808 nm for 2atm% Nd doped) |
Absorption Coefficient | 31.4 cm-1@808 nm |
Absorption Length | 0.32 mm @808 nm |
Intrinsic Loss | Less than 0.1% cm-1@1064 nm |
Gain Bandwidth | 0.96 nm (257 GHz) @1064 nm |
Polarized Laser Emission | ppolarization, Parallel to optic axis (c-axis) |
Diode Pumped Optical to Optical Efficiency | > 60% |
Crystal Class | Positive uniaxial, no=na=nb, ne=nc, no=1.9573, ne=2.1652, @1064nm no=1.9721, ne=2.1858, @808nm no=2.0210, ne=2.2560, @532nm |
Sellmeier Equation (for pure YVO4 crystals, λin um) | no2=3.77834+0.069736/(λ2-0.04724) – 0.0108133λ2ne2=4.59905+0.110534/(λ2-0.04813) – 0.0122676λ2 |